Phase size effect in thin Ge-Se polycrystalline films

被引:0
|
作者
E. V. Aleksandrovich
E. V. Stepanova
A. V. Vakhrouchev
A. N. Aleksandrovich
D. L. Bulatov
机构
[1] Russian Academy of Sciences,Institute of Mechanics, Ural Branch
[2] Udmurtia State University,undefined
来源
Technical Physics | 2013年 / 58卷
关键词
Raman Spectrum; GeSe; Universal Program; Equilibrium Point Defect; Neorg Mater;
D O I
暂无
中图分类号
学科分类号
摘要
The Raman spectra of thin (d = 60–170 nm) Ge-Se polycrystalline films obtained by vacuum thermal evaporation of Ge10Se90 glass are investigated in the spectral range 110–310 cm−1. The coexistence of the glasslike and crystalline phases α-Se, β-Se, and β-GeSe2 is established using the X-ray diffraction method. Analysis of diffraction patterns and the Raman spectra of polycrystalline samples of various thicknesses demonstrates a phase size effect in the transition of Se from the α-monoclinic to the β monoclinic modification (d ∼ 120 nm). It is found that the crystalline phase of Se is of the nanodisperse type with an average grain size of ∼30–50 nm. Crystallites of β-GeSe2 have an average size of ∼100–130 nm.
引用
收藏
页码:1291 / 1296
页数:5
相关论文
共 50 条
  • [21] Structural and optical properties of Te doped Ge-Se phase-change thin films: A material for optical storage
    Al-Agel, F. A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 18 : 36 - 41
  • [22] Structural origin of the intermediate phase in Ge-Se glasses
    Chen, G.
    Inam, F.
    Drabold, D. A.
    APPLIED PHYSICS LETTERS, 2010, 97 (13)
  • [23] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF GE-SE THIN-FILMS
    XIAO, TSD
    STRUTT, PR
    LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 207 - 211
  • [24] Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin films
    Mitkova, M
    Kozicki, MN
    Kim, HC
    Alford, TL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 552 - 556
  • [25] Morphology of electrochemically grown silver deposits on silver-saturated Ge-Se thin films
    Mitkova, MI
    Kozicki, MN
    Aberouette, JP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 326 : 425 - 429
  • [26] ON THE ROLE OF WATER IN THE PHOTOINDUCED OXIDATION OF AMORPHOUS GE-SE FILMS
    SCHROETER, B
    ABRAHAM, M
    BROESE, E
    WEISSBRODT, P
    MELCHER, N
    SURFACE AND INTERFACE ANALYSIS, 1989, 14 (12) : 835 - 838
  • [27] Structural modification of Ge-Se amorphous films with the addition of Sb
    Ganjoo, A
    Jain, H
    Khalid, S
    Pantano, CG
    PHILOSOPHICAL MAGAZINE LETTERS, 2005, 85 (10) : 503 - 512
  • [28] STUDY OF PHOTOINDUCED EFFECT IN OBLIQUELY-DEPOSITED AMORPHOUS GE-SE FILMS BY XPS
    UENO, T
    ODAJIMA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L519 - L522
  • [29] Rigidity transitions in binary Ge-Se glasses and the intermediate phase
    Boolchand, P
    Feng, X
    Bresser, WJ
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 293 : 348 - 356
  • [30] Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films
    Kohoutek, T.
    Orava, J.
    Hrdlicka, M.
    Wagner, T.
    Vlcek, Mil.
    Frumar, M.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (12) : 2376 - 2380