Flux-mediated epitaxy for ferroelectric Bi4Ti3O12 single crystal film growth

被引：0
|
作者：
R. Takahashi
Y. Yonezawa
Y. Matsumoto
H. Koinuma
机构：
[1] Tokyo Institute of Technology,Materials and Structures Laboratory
[2] National Institute of Material Science,Department of Advanced Materials Science, School of Frontier Science
[3] Fuji Electric Advanced Technology Co.,undefined
[4] Ltd.,undefined
[5] CREST Japan Science and Technology Agency,undefined
[6] University of Tokyo,undefined
来源：
Journal of Electroceramics | 2006年 / 17卷
关键词：
Flux-mediated epitaxy; Bi; Ti; O; Volatile materials; Flux; Combinatorial technique;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose the “Flux-mediated epitaxy” as a novel concept for the growth of single crystalline films of incongruent, volatile, and high-temperature-melting compounds. In flux-mediated eptitaxy, by supplying materials precursors from the gas phase through the liquid flux films pre-deposited on the substrate, a quasi-thermodynamic equilibrium condition is obtained at the interface between the growing films and the flux films. This process has been demonstrated in this paper by fabricating ferroelectric Bi4Ti3O12 films, which has volatile Bi oxide.
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页码：189 / 195
页数：6
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