Current-voltage characteristics of thin-film gas sensor structures based on tin dioxide

被引:0
|
作者
V. V. Simakov
O. V. Yakusheva
A. I. Grebennikov
V. V. Kisin
机构
[1] Saratov State Technical University,
[2] “Synthesis” Company,undefined
来源
Technical Physics Letters | 2005年 / 31卷
关键词
Dioxide; SnO2; Film Surface; Applied Electric Field; Adsorbed Species;
D O I
暂无
中图分类号
学科分类号
摘要
The experimental current-voltage (I–U) curves of thin-film structures based on tin dioxide (SnO2) exhibit nonlinearity in the range of strong applied electric fields. The results of I-U measurements are interpreted within the framework of a model that assumes the drift of adsorbed ions over the film surface. The observed phenomenon can be used both for detecting the impurities in air and for recognizing the types of adsorbed species.
引用
收藏
页码:339 / 340
页数:1
相关论文
共 50 条
  • [31] Effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors
    Advanced Micro Devices, Austin, United States
    IEEE Trans Electron Devices, 8 (1306-1308):
  • [32] Current-voltage characteristics of thin-film diode elements and application of Poole-Frenkel equation
    Hirai, T
    Morita, H
    Tasaka, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (11): : 6549 - 6554
  • [33] EFFECT OF MICROWAVE IRRADIATION ON CURRENT-VOLTAGE CHARACTERISTICS OF THIN-FILM SUPERCONDUCTING TUNNEL-JUNCTIONS
    TULIN, VA
    JETP LETTERS, 1974, 20 (08) : 252 - 254
  • [34] The effect of substrate curvature on capacitance and current-voltage characteristics in thin-film transistors on flexible substrates
    Chattopadhyay, Shirsopratim
    Labram, John G.
    JOURNAL OF PHYSICS-MATERIALS, 2021, 4 (02):
  • [35] The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors
    Olasupo, KR
    Yarbrough, W
    Hatalis, MK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (08) : 1306 - 1308
  • [36] Modeling of current-voltage characteristics of thin film solar cells
    Mannan, M. A.
    Anjan, M. S.
    Kabir, M. Z.
    SOLID-STATE ELECTRONICS, 2011, 63 (01) : 49 - 54
  • [37] Leakage current-voltage characteristics of ferroelectric thin film capacitors
    Lee, K
    Rhee, BR
    Lee, C
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 38 (06) : 723 - 728
  • [38] Analytical current-voltage model for polycrystalline silicon thin-film transistors
    Kimura, M
    Takizawa, T
    Miyasaka, M
    Inoue, S
    Shimoda, T
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 79 - 84
  • [39] SENSITIVITY AND SELECTIVITY OF A THIN-FILM TIN OXIDE GAS SENSOR
    DEANGELIS, L
    MINNAJA, N
    SENSORS AND ACTUATORS B-CHEMICAL, 1991, 3 (03) : 197 - 204
  • [40] Analytical current-voltage model for nanocrystalline silicon thin-film transistors
    Hatzopoulos, A. T.
    Pappas, I.
    Tassis, D. H.
    Arpatzanis, N.
    Dimitriadis, C. A.
    Templier, F.
    Oudwan, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (19)