Strain effect on intersubband transition in a GaN/AlGaN single quantum well on arbitrary crystal planes

III-nitride intersubband transition has attracted much attention due to their great potential to fabricate ultrafast optoelectronic devices with broad spectrum. However, under most conditions, the transition properties are adversely affected by the polarization effect and strain effect existing in nitride materials. In this work, the optical properties of intersubband transition in a GaN/Al0.28Ga0.72N single quantum well on arbitrary crystal planes are theoretically compared for the structure strained on GaN or AlN. Under the conditions of two strain states, the difference of transition energy is gradually diminishing with the weakening of polarization intensity, while for the magnitude of intersubband dipole moment, inverse relationships are obviously observed between two groups of crystal planes when θ < 45° and 45° < θ < 90° tilted from c-plane. These findings indicate that an appropriate template layer should be chosen when designing an orientation-related intersubband device with high efficiency.