Modeling the deflection of relativistic electrons in a bent silicon crystal

被引：0

作者：

V. P. Koshcheev

Yu. N. Shtanov

D. A. Morgun

T. A. Panina

机构：

[1] Strela Branch of the National Research University MAI (Moscow Aviation Institute),Surgut Oil and Gas Institute

[2] Branch of Tyumen State Oil and Gas University,undefined

[3] Surgut State University,undefined

来源：

Technical Physics Letters | 2015年 / 41卷

关键词：

Technical Physic Letter; Relativistic Electron; Atomic Diffusion; Atomic Chain; Channeling;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle–Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa–Ohtsuki diffusion coefficient reaches a maximum value.

引用

页码：946 / 949

页数：3

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