The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon

被引：0
|
作者：
A. A. Lisachenko
A. M. Aprelev
机构：
[1] St. Petersburg State University,Institute of Physics
来源：
Technical Physics Letters | 2001年 / 27卷
关键词：
Spectroscopy; Silicon; Thermal Treatment; Sample Surface; Electron Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Effects of the surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) were studied by methods of photoluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-transform IR spectroscopy. An analysis of evolution of the por-Si characteristics in the course of thermal treatment in vacuum revealed a correlation between the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The thermodesorption of adsorbate from por-Si leads to atomic rearrangements on the sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material.
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页码：134 / 137
页数：3
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