Electron scattering with spin flip in indium antimonide and indium arsenide

被引：0
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作者：
R. I. Bashirov
M. M. Gadzhialiev
Z. Sh. Pirmagomedov
机构：
[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Scientific Center
来源：
Physics of the Solid State | 2009年 / 51卷
关键词：
72.15.Gd; 72.10.Fk;
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摘要：
The longitudinal magnetoresistance has been investigated at temperatures in the range from 2.8 to 200 K in a magnetic field of up to 200 kOe with the aim of determining the temperature range and the magnetic field strength at which charge carrier scattering with spin flip occurs in n-type indium arsenide and n-type indium antimonide. It is established that quantum oscillations of the longitudinal magnetoresistance of indium arsenide exhibit weak zero maxima due to electron scattering with spin flip at temperatures in the range from 4 to 35 K in a magnetic field of 146 kOe. For the longitudinal magnetoresistance of indium antimonide, zero maxima caused by electron scattering with spin flip are revealed in the temperature range from 60 to 80 K in a magnetic field of 132 kOe.
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页码：678 / 680
页数：2
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