Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

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作者
Liuqi Zhang
Xiaolei Yang
Qi Jiang
Pengyang Wang
Zhigang Yin
Xingwang Zhang
Hairen Tan
Yang (Michael) Yang
Mingyang Wei
Brandon R. Sutherland
Edward H. Sargent
Jingbi You
机构
[1] Key Laboratory of Semiconductor Materials Science,Department of Electrical and Computer Engineering
[2] Institute of Semiconductors,undefined
[3] Chinese Academy of Sciences,undefined
[4] College of Materials Science and Opto-electronic Technology,undefined
[5] University of Chinese Academy of Sciences,undefined
[6] University of Toronto,undefined
[7] College of Optical Science and Engineering,undefined
[8] Zhejiang University,undefined
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摘要
Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m−2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.
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