Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons

被引：5

作者：

Wu C. ^{[1
]}

Wang L. ^{[1
]}

Zhang Z. ^{[1
]}

Zhang X. ^{[1
]}

Peng Q. ^{[1
]}

Cai J. ^{[1
]}

Yu Y. ^{[1
]}

Guo H. ^{[1
]}

Jie J. ^{[1
]}

机构：

[1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei

来源：

Frontiers of Optoelectronics in China | 2011年 / 4卷 / 2期

基金：

中国国家自然科学基金;

关键词：

CdS nanoribbons; nano-field effect transistors; nanodevices; photoconductivity; silver doping;

D O I：

10.1007/s12200-011-0153-x

中图分类号：

学科分类号：

摘要：

Sliver doped n-type CdS nanoribbons (NRs) were successfully synthesized by using Ag2S as the dopant via a thermal co-evaporation method. The CdS:Ag NRs have wurtzite single-crystal structure with growth direction of [110]. Significantly, the conductivity of the CdS NRs increased ~6 orders of magnitude by silver doping. Moreover, the Ag doped CdS NRs showed much enhanced photoconductivity compared with the undoped ones, which will greatly favor the application of CdS nanostructures in high-performance nano-optoelectronic devices. © 2011 Higher Education Press and Springer-Verlag Berlin Heidelberg.

引用

页码：161 / 165

页数：4

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