The effect of annealing on the electroluminescence of SiO2 layers with excess silicon

被引：0
|
作者：
A. P. Baraban
D. V. Egorov
Yu. V. Petrov
L. V. Miloglyadova
机构：
[1] St. Petersburg State University,Institute of Physics
来源：
Technical Physics Letters | 2004年 / 30卷
关键词：
Oxide; Silicon; SiO2; Dioxide; Oxide Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have studied the effect of annealing on the electroluminescence (EL) spectrum of Si-SiO2 structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5×1016 to 3×1017 cm−2 leads to the appearance of an intense emission band at 2.7 eV in the EL spectrum. The postimplantation annealing leads to a decrease in the intensity of this band and to the appearance of a new EL band at 1.6 eV assigned to radiative transitions in defect centers formed at the boundaries between silicon nanoclusters and silicon dioxide.
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页码：85 / 87
页数：2
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