The Similar Defect Chemistry of Highly-Doped SrBi2Ta2O9 and SrBi2Nb2O9

被引:0
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作者
A. C. Palanduz
D. M. Smyth
机构
[1] Lehigh University,Materials Research Center
[2] Intel Corporation,undefined
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关键词
defects; doping; acceptor dopants; donor dopants; place exchange; equilibrium conductivity; seebeck; conductivity jump; SBT; SBN;
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摘要
The equilibrium electrical conductivities of undoped SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN) have been shown to behave quite differently. SBT has the behavior expected for a 1% acceptor-doped oxide, while SBN behaves like a 1% donor-doped oxide. This difference has been related to the substantial cation place exchange that occurs between the Bi+ 3 and Sr+ 2 ions in the alternating layers of the structure. It was proposed that this place exchange is not entirely self-compensating, as would be expected for a simple, isotropic oxide, but that there is some local compensation within each layer by lattice and/or electronic defects. It is now shown that the equilibrium conductivity of 3% donor-doped SBT is similar to that of undoped SBN, while the equilibrium conductivity of 3% acceptor-doped SBN resembles that of undoped SBT. Thus the defect chemistrys of the two compounds are quite similar, but the equilibrium conductivities are displaced along a doping axis.
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页码:123 / 132
页数:9
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