Surface and optical property modifications of self-assembled CdTe/ZnTe quantum dots caused by thermal treatment

被引：0
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作者：
H.S. Lee
H.L. Park
T.W. Kim
机构：
[1] Yonsei University,Institute of Physics and Applied Physics
[2] Hanyang University,Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering
来源：
Journal of Materials Research | 2008年 / 23卷
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摘要：
Atomic force microscopy images showed that the size of the CdTe quantum dots (QDs) slightly increased with increasing annealing temperature up to 350 °C. Photoluminescence spectra showed that the excitonic peak corresponding to the interband transition from the ground electronic subband to the ground heavy-hole band (E1–HH1) in the CdTe/ZnTe QDs annealed at 350 °C was shifted to lower energy compared with that in as-grown CdTe/ZnTe QDs. The full width at half-maximum of the E1–HH1 transition peak in the CdTe/ZnTe QDs annealed at 350 °C decreased resulting from the improvement of the crystallinity for the annealed CdTe QDs.
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页码：1315 / 1319
页数：4
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