The development of nanocrystalline silicon for emerging microelectronic and nanoelectronic applications

被引:0
|
作者
Christopher C. Striemer
Rishikesh Krishnan
Philippe M. Fauchet
机构
[1] the University of Rochester,the Department of Electrical and Computer Engineering
来源
JOM | 2004年 / 56卷
关键词
Rapid Thermal Anneal; Silicon Nanocrystals; Nanocrystal Size; Nanocrystalline Silicon; Minimum Feature Size;
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中图分类号
学科分类号
摘要
Films consisting of nanometer-scale silicon crystals with narrow size distribution can be fabricated using a variety of techniques and are of technological interest for nonvolatile semiconductor memory applications. One fabrication technique based on the crystallization of thin amorphous silicon films also shows potential for large-scale production of single isolated nanocrystals for future single-electron transistor and memory applications. A review of the most promising nanocrystalline silicon fabrication techniques and a discussion of current research in the area of crystallized thin-film amorphous silicon are presented in this article.
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页码:20 / 25
页数:5
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