Nanocrystalline silicon superlattices for nanoelectronic devices

被引：0
|
作者：
Tsybeskov, Leonid [1 ]
机构：
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA
来源：
ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY | 2002年
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper provides a brief introduction to a novel nanostructured system consisting of ordered layers of Si nanocrystals separated by atomically flat and chemically abrupt layers of amorphous silicon dioxide with thickness of several nanometers. The unique structural, optical and electrical properties permitting unusual device application are discussed.
引用
收藏
页码：304 / 307
页数：4
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