A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients

被引：0

作者：

Zhichao Zhang

Yi Ren

Li Chen

Nelson J. Gaspard

Arthur. F. Witulski

Timothy W. Holman

Bharat L. Bhuva

Shi-Jie Wen

Ramaswami Sammynaiken

机构：

[1] University of Saskatchewan,Department Electrical and Computer Engineering

[2] University of Saskatchewan,Saskatchewan Structural Science Centre

[3] Vanderbilt University,Electrical Engineering and Computer Science Department

[4] Cisco Inc.,undefined

来源：

Journal of Electronic Testing | 2013年 / 29卷

关键词：

Built-in voltage sensor; Single-event transient; Pulsed laser; Single event detection; CMOS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel built-in voltage sensor circuit has been developed in 90-nm CMOS technology to characterize temporal and physical locations of ion hits. The sensing circuit only has 8 transistors, with very small area and power overhead. Simulations and laser experimental results illustrate the effectiveness of the sensing circuit. The sensors can be implemented in grid formation to systematically detect the ion hits in real time.

引用

下载

页码：249 / 253

页数：4

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