Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization

被引：0
|
作者：
A. V. Kuchuk
V. P. Klad’ko
V. F. Machulin
A. Piotrowska
机构：
[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics
[2] Institute of Electron Technology,undefined
来源：
Technical Physics | 2006年 / 51卷
关键词：
81.07.-b;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ta-Si-N ternary barrier films were obtained by reactive rf magnetron sputtering of a Ta5Si3 target in an Ar-N2 gas discharge. The films were tested as diffusion barriers between Au and GaN layers. The efficiency of these films as diffusion-suppressing barriers is determined by transmission electron microscopy, secondary-ion mass spectroscopy, and X-ray diffraction analysis. It is shown that the diffusion barrier with optimized properties (Ta34Si25N41) in an Au/GaN metallization system can be used to advantage at temperatures above 800°C. A correlation between the composition, microstructure, resistivity, thermal stability, and diffusion-suppressing properties of the films is discussed.
引用
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页码：1383 / 1385
页数：2
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