Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE

被引：0

作者：

Hee Ae Lee

Jae Hwa Park

Joo Hyung Lee

Seung Hoon Lee

Hyo Sang Kang

Seong Kuk Lee

Won Il Park

Sung Chul Yi

机构：

[1] Hanyang University,Division of Materials Science and Engineering

[2] Hanyang University,Department of Chemical Engineering

[3] AMES Micron Co. LTD,undefined

来源：

Electronic Materials Letters | 2021年 / 17卷

关键词：

Hydride vapor phase epitaxy; Gallium nitride; Annealing; Residual thermal stress; III-nitride compound;

D O I：

暂无

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学科分类号：

摘要：

引用

页码：43 / 53

页数：10