Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE

被引：0
|
作者：
Hee Ae Lee
Jae Hwa Park
Joo Hyung Lee
Seung Hoon Lee
Hyo Sang Kang
Seong Kuk Lee
Won Il Park
Sung Chul Yi
机构：
[1] Hanyang University,Division of Materials Science and Engineering
[2] Hanyang University,Department of Chemical Engineering
[3] AMES Micron Co. LTD,undefined
来源：
Electronic Materials Letters | 2021年 / 17卷
关键词：
Hydride vapor phase epitaxy; Gallium nitride; Annealing; Residual thermal stress; III-nitride compound;
D O I：
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页码：43 / 53
页数：10
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