Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system

被引：1
|
作者：
D. G. Vasil’ev
V. P. Evtikhiev
V. E. Tokranov
I. V. Kudryashov
V. P. Kochereshko
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Spectroscopy; State Physics; GaAs; Photoexcited Carrier; GaAs Matrix;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A study is reported of the effect of (001)GaAs substrate misorientation in the [010] direction on the distribution of MBE-grown self-assembled InAs/GaAs quantum dots in size and position in the GaAs matrix. Temperature-induced narrowing of the exciton photoluminescence line of a quantum-dot ensemble caused by redistribution of photoexcited carriers among dots of different size has been observed.
引用
收藏
页码：787 / 789
页数：2
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