Structural, optoelectronic and electrochemical properties of nickel oxide films

被引：0

作者：

B. Subramanian

M. Mohammed Ibrahim

K. R. Murali

V. S. Vidhya

C. Sanjeeviraja

M. Jayachandran

机构：

[1] Central Electrochemical Research Institute,Electrochemical Materials Science Division

[2] Birla Institute of Technology and Science (BITS)-Pilani,School of Physics

[3] Alagappa University,undefined

来源：

Journal of Materials Science: Materials in Electronics | 2009年 / 20卷

关键词：

Nickel Oxide; Oxygen Evolution Reaction; Electrochromic Property; Electrochromic Material; Thermal Absorber;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the polycrystalline nature of the films. The microstructural parameters were evaluated. The band gap of the films was found to be about 3.60 eV. Electrical resistivity of the films was 4.5 × 10−4 Ω cm. FTIR studies indicated a broad spectrum centered at 461.6 cm−1. Cyclic voltammetry studies in 1 M KOH solution revealed good electronic electrochromic behaviour.

引用

页码：953 / 957

页数：4

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