The dielectric relaxation behaviour of the composites prepared by solution casting of exfoliated graphene nanoplatelets (xGnP) and ethylene vinyl acetate (EVA) were investigated. The percolation threshold was achieved at 17 phr (parts per hundred rubber) of xGnP loading. Filler contributions to the electrical property were observed by the increase in ac conductivity and permittivity in the composites. The effect of filler loading on the complex and real parts of the impedance were investigated. The effect of temperature on dielectric loss tangent, ac conductivity and Nyquist plot of xGnP reinforced EVA also been studied. A careful comparison of the experimental complex impedance plots and model fitted plots were studied which satisfied the accuracy of the data obtained experimentally.
机构:
Univ Malaysia Sabah, Fac Engn, UMS Rd, Kota Kinabalu 88400, Sabah, MalaysiaUniv Malaysia Sabah, Fac Engn, UMS Rd, Kota Kinabalu 88400, Sabah, Malaysia
Sipaut, Coswald S.
Halim, Husna A.
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Univ Sains Malaysia, Sch Chem Sci, George Town 11800, MalaysiaUniv Malaysia Sabah, Fac Engn, UMS Rd, Kota Kinabalu 88400, Sabah, Malaysia
Halim, Husna A.
Jafarzadeh, Mohammad
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Razi Univ, Fac Chem, Kermanshah 6714967346, IranUniv Malaysia Sabah, Fac Engn, UMS Rd, Kota Kinabalu 88400, Sabah, Malaysia
机构:
Inst Charles Sadron, Precis Macromol Chem Grp, CNRS UPR 22, 23 Rue Loess, F-67034 Strasbourg 2, FranceIran Univ Sci & Technol, Sch Chem Engn, Tehran 1684613114, Iran
Parpaite, Thibault
Brison, Loic
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Mat Nova Res Ctr, Polymer & Composite Mat Unit, Nicolas Copernic 3, B-7000 Mons, BelgiumIran Univ Sci & Technol, Sch Chem Engn, Tehran 1684613114, Iran
Brison, Loic
Laoutid, Fouad
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Mat Nova Res Ctr, Polymer & Composite Mat Unit, Nicolas Copernic 3, B-7000 Mons, BelgiumIran Univ Sci & Technol, Sch Chem Engn, Tehran 1684613114, Iran
Laoutid, Fouad
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Vahabi, Henri
Saeb, Mohammad Reza
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Inst Color Sci & Technol, Dept Resin & Addit, POB 16765-654, Tehran, IranIran Univ Sci & Technol, Sch Chem Engn, Tehran 1684613114, Iran
Saeb, Mohammad Reza
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T,
2020,
9
(04):
: 7341
-
7353