Effect of doping concentration and annealing temperature on threshold voltages of bipolar resistive switching in Mn-doped BiFeO3 films

被引：0
|
作者：
Jinming Luo
Haining Zhang
Jianping Wen
Xiaodong Yang
机构：
[1] Jiaying University,School of Physics and Optical Information Sciences
来源：
Journal of Sol-Gel Science and Technology | 2016年 / 78卷
关键词：
Threshold voltages; Resistive switching; Bismuth ferrite; Thin films; Sol–gel;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：166 / 170
页数：4
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