Microstructural Characterization of V-Defects in InGaN/GaN Multiquantum Wells

被引：0

作者：

H. Wang

G. Jin

Q. Tan

机构：

[1] Xiangnan University,Academy of Electronic Information and Electrical Engineering

[2] Hunan Normal University,Institute of Physics and Information Science

来源：

JETP Letters | 2020年 / 111卷

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学科分类号：

摘要：

InGaN multiple-quantum-well (MQW) structures grown by metal-organic chemical-vapor deposition (MOCVD) are found to contain V-defects attached to threading dislocations. The nature of the V-defects was evaluated using transmission electron microscopy (TEM), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). Some (a + c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-defect. The V-defects in the multiple-quantum- well have the thin six-walled structure with InGaN/GaN{101̄1} layers. The mechanism of formation of these defects has been discussed in terms of stress induced by lattice mismatch and reduced In incorporation on the {101̄1}planes in comparison to the (0001) surface.

引用

页码：264 / 267

页数：3

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