Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150–200 K

被引：0
|
作者：
A. P. Odrinsky
机构：
[1] National Academy of Sciences of Belarus,Institute of Technical Acoustics
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Thermal Emission; Deep Level Transient Spectroscopy; Exponential Component; Relaxation Kinetic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The specific features of detecting the contribution of the characteristic intrinsic defect in semi-insulating GaAs to photocurrent relaxation are considered. A detailed analysis of the relaxation kinetics based on approximation by the sum of exponential components is presented. The approximation results are compared with the data of photo-induced current transient spectroscopy.
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页码：285 / 289
页数：4
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