Thermoelectric properties of porous silicon

被引：0

作者：

J. de Boor

D. S. Kim

X. Ao

M. Becker

N. F. Hinsche

I. Mertig

P. Zahn

V. Schmidt

机构：

[1] Max Planck Institute of Microstructure Physics,Institut für Physik

[2] Martin-Luther-Universität Halle-Wittenberg,undefined

来源：

Applied Physics A | 2012年 / 107卷

关键词：

Porous Silicon; Thermoelectric Property; Thermoelectric Material; Charge Carrier Concentration; Thermoelectric Figure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.

引用

页码：789 / 794

页数：5

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