Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy

被引：0
|
作者：
E. O. Filatova
A. A. Sokolov
E. Yu. Taracheva
I. V. Bagrov
机构：
[1] St. Petersburg State University,
来源：
Technical Physics Letters | 2009年 / 35卷
关键词：
61.05.cm;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The state of the surface of standard phosphorus-doped n-Si(111) and n-Si(100) (KEF grade) and boron-doped p-Si(111) (KDB grade) single-crystal wafers treated in a 50% HF–70% HNO3 (1: 3, v/v) polishing solution has been studied using soft X-ray reflection spectroscopy. The fine structure of the reflection spectra in the region of the Si L2,3 ionization threshold has been analyzed. The dependence of the natural oxide thickness on the orientation of a silicon single crystal surface is established.
引用
收藏
页码：70 / 72
页数：2
相关论文
共 50 条
  • [1] Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy
    Filatova, E. O.
    Sokolov, A. A.
    Taracheva, E. Yu.
    Bagrov, I. V.
    TECHNICAL PHYSICS LETTERS, 2009, 35 (01) : 70 - 72
  • [2] Optical properties of treated and untreated monocrystalline p-Si⟨111⟩, p-Si⟨100⟩, n-Si⟨111⟩ and n-Si⟨100⟩ wafers in the visible region at room temperature
    Hashim, MR
    Salih, KQ
    MICROELECTRONIC ENGINEERING, 2005, 81 (2-4) : 243 - 250
  • [3] ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111)
    RAPPICH, J
    AGGOUR, M
    RAUSCHER, S
    LEWERENZ, HJ
    JUNGBLUT, H
    SURFACE SCIENCE, 1995, 335 (1-3) : 160 - 165
  • [4] Electrodeposition of Pb on n-Si(111)
    Rashkova, B
    Guel, B
    Potzschke, RT
    Staikov, G
    Lorenz, WJ
    ELECTROCHIMICA ACTA, 1998, 43 (19-20) : 3021 - 3028
  • [5] Cu electroplating on n-Si(111): Properties and structure of n-Si/Cu junctions
    Zambelli, T
    Pillier, F
    Allongue, P
    ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS, 1999, 99 (09): : 177 - 184
  • [6] Electrochemical nanostructuring of n-Si(111) single-crystal faces
    Pötzschke, RT
    Staikov, G
    Lorenz, WJ
    Wiesbeck, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) : 141 - 149
  • [7] Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces
    Parui, S.
    van der Ploeg, J. R. R.
    Rana, K. G.
    Banerjee, T.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (10-11): : 388 - 390
  • [8] A Scanning Tunneling Spectroscopy Study on TCNQ/n-Si and/p-Si
    Lee, Haeseong
    Lee, Namhyung
    Lee, Haiwon
    Bae, Sung Soo
    Kim, Sehun
    Molecular Crystals and Liquid Crystals, 2002, 377 (01) : 25 - 28
  • [9] A scanning tunneling spectroscopy study on TCNQ/n-Si and/p-Si
    Lee, H
    Lee, N
    Lee, H
    Bae, SS
    Kim, S
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 377 : 25 - 28
  • [10] Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection
    Zhao, Xiaolong
    Huang, Danyang
    He, Yongning
    Peng, Wenbo
    Li, Gaoming
    SOLID-STATE ELECTRONICS, 2022, 188
12345