A Scanning Tunneling Spectroscopy Study on TCNQ/n-Si and/p-Si

被引：0
|
作者：
Lee, Haeseong [1 ]
Lee, Namhyung [1 ]
Lee, Haiwon [1 ]
Bae, Sung Soo [2 ]
Kim, Sehun [2 ]
机构：
[1] Department of Chemistry, Hanyang University, Seoul,133-791, Korea, Republic of
[2] Department of Chemistry, KAIST, Taejeon,305-701, Korea, Republic of
来源：
Molecular Crystals and Liquid Crystals | 2002年 / 377卷 / 01期
关键词：
Film thickness - Silicon compounds;
D O I：
10.1080/713738551
中图分类号：
学科分类号：
摘要：
A thin film (thickness: 1.5 nm) of tetracyanoquinodimethane (TCNQ), a well-known electron acceptor, was fabricated on p-Si and n-Si using a spin casting method. The junction properties of these systems were investigated using scanning tunneling spectroscopy (STS). I/V curves of the two systems showed rectifying properties with different polarity. It can provide a new technology to fabricate molecular-level rectifier if nanolithography is accomplished on these systems. © 2002, Copyright Taylor & Francis Group, LLC.
引用
收藏
页码：25 / 28
相关论文
共 50 条
  • [1] A scanning tunneling spectroscopy study on TCNQ/n-Si and/p-Si
    Lee, H
    Lee, N
    Lee, H
    Bae, SS
    Kim, S
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 377 : 25 - 28
  • [2] A comparative study of the ZnO Fibers-based photodetectors on n-Si and p-Si
    Yildirim, Fatma
    Orhan, Zeynep
    Khalili, Saba
    Chenari, Hossein Mahmoudi
    Aydogan, S.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (39)
  • [3] Local-density approximation study of p-Si/n-Si nanoscale junctions
    Zavodinsky, VG
    Kuyanov, IA
    SUPERLATTICES AND MICROSTRUCTURES, 1996, 20 (02) : 187 - 192
  • [4] Local-density approximation study of p-Si/n-Si nanoscale junctions
    Far Eastern Branch of the Russian, Acad of Sciences, Vladivostok, Russia
    Superlattices Microstruct, 2 (187-192):
  • [5] Compton profiles of p-Si and n-Si in an external electric field
    Demir, D.
    Sahin, Y.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (04): : 701 - 706
  • [6] LONG-LIFETIME PHOTOCONDUCTIVITY IN CZ N-SI AND P-SI
    GLINCHUK, KD
    LITOVCHENKO, NM
    PTITSIN, VY
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (12) : 1295 - 1299
  • [7] Characterisation of Au/n-Si and Pt/p-Si by HRTEM and XRD
    Bahrim, M.
    Popescu, I. V.
    Ciupina, V.
    Prodan, G.
    Cimpoca, Gh V.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (04): : 806 - 809
  • [8] Graviporosity of the porous silicon layers on the n-Si and p-Si substrates
    2001, Nauka
  • [9] Optical properties of treated and untreated monocrystalline p-Si⟨111⟩, p-Si⟨100⟩, n-Si⟨111⟩ and n-Si⟨100⟩ wafers in the visible region at room temperature
    Hashim, MR
    Salih, KQ
    MICROELECTRONIC ENGINEERING, 2005, 81 (2-4) : 243 - 250
  • [10] Study of photovoltaic characteristics of TiO2/n-Si/p-Si and n-PS/p-PS/Si
    Xiang, Mei
    Jia, Zhen-Hong
    Tu, Chu-Zhe
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2007, 28 (02): : 218 - 220
12345