Stochastic model for action potential simulation including ion shot noise

被引:0
|
作者
Beatriz G. Vasallo
Fabio Galán-Prado
Javier Mateos
Tomás González
Sara Hedayat
Virginie Hoel
Alain Cappy
机构
[1] Universidad de Salamanca,Dpto. de Física Aplicada
[2] Centre National de la Recherche Scientifique,undefined
[3] Université de Lille,undefined
[4] USR 3380 - IRCICA,undefined
[5] Centre National de la Recherche Scientifique,undefined
[6] Université de Lille,undefined
[7] ISEN,undefined
[8] Université de Valenciennes,undefined
[9] UMR 8520 - IEMN,undefined
来源
关键词
Monte Carlo technique; Action potential; Cell membranes; Ion shot noise;
D O I
暂无
中图分类号
学科分类号
摘要
Development of bioinspired devices for energy-efficient computing requires numerical models that can reproduce the global electrical behavior of neurons. We present herein a stochastic model based on the Monte Carlo technique that can reproduce the steady state and the action potential in neurons in terms of the probabilities for different ions to cross the cell membrane. Gating channels for sodium and potassium cations and leakage channels are taken into account following the Hodgkin–Huxley equations in a first stage. We then expand the model to include the time-dependent ion concentrations in the intra- and extracellular space and the related Nernst potentials, and the existence of ion pumps to equilibrate the steady-state currents. The model allows monitoring of the random passage of ions across a biological membrane, and thus includes the influence of ion shot noise. For small membrane areas, results evidence that, when considered alone, shot noise has a discernible effect on spiking in a wide range of excitation currents, not only by leading to the onset of spikes but also by inhibiting their appearance.
引用
收藏
页码:419 / 430
页数:11
相关论文
共 50 条
  • [21] Simulation and Measurement of Shot Noise in Resonant Tunneling Structures
    G. Iannaccone
    G. Lombardi
    M. Macucci
    C. Ciofi
    B. Pellegrini
    Analog Integrated Circuits and Signal Processing, 2000, 24 (1) : 73 - 78
  • [22] Simulation and measurement of shot noise in resonant tunneling structures
    Iannaccone, G
    Lombardi, G
    Macucci, M
    Ciofi, C
    Pellegrini, B
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2000, 24 (01) : 73 - 78
  • [23] The influence of noise exposure on the parameters of a convolution model of the compound action potential
    Chertoff, M. E.
    Lichtenhan, J. T.
    Tourtillott, B. M.
    Esau, K. S.
    JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 2008, 124 (04): : 2174 - 2185
  • [24] SIMULATION OF ACTION POTENTIAL ON A THIN-LAYER MEMBRANE MODEL
    LAKATOS, T
    ACTA PHYSIOLOGICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1978, 52 (2-3): : 303 - 303
  • [25] Investigation of shot noise induced line-edge roughness by continuous model based simulation
    Yuan, L
    Neureuther, A
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 312 - 321
  • [26] A stochastic model for the noise levels
    Gimenez, A.
    Gonzalez, M.
    JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 2009, 125 (05): : 3030 - 3037
  • [27] Analytical model of the "Shot Noise" effect in photoresist
    Gallatin, GM
    Liddle, JA
    MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 365 - 368
  • [28] A numerical model of electron beam shot noise
    McNeil, BWJ
    Robb, GRM
    Poole, MW
    PROCEEDINGS OF THE 2003 PARTICLE ACCELERATOR CONFERENCE, VOLS 1-5, 2003, : 950 - 952
  • [29] Analytical model of the `shot noise' effect in photoresist
    Gallatin, Gregg M.
    Liddle, J. Alexander
    Microelectronic Engineering, 1999, 46 (01): : 365 - 368
  • [30] Uniform plasma model of shot noise in gyroklystrons
    Manheimer, WM
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2001, 29 (04) : 639 - 648