Influence of Zn+-ion implantation on the process of sapphire charging by an electron beam

被引：0

作者：

Tatarintsev A.A. ^{[1
,2
]}

Privezentsev V.V. ^{[2
]}

Rau E.I. ^{[1
]}

Goryachev A.V. ^{[3
]}

机构：

[1] Moscow State University, Physical Faculty, Moscow

[2] Institute of Physics and Technology, Russian Academy of Sciences, Moscow

[3] Moscow Institute of Electronic Technology (NRU), Zelenograd, 124498, Moscow

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2018年 / 12卷 / 2期

关键词：

Electron irradiation; Ion irradiation; Sapphire charging; Surface potential; Zn[!sup]+[!/sup]-ion implantation;

D O I：

10.1134/S1027451018020143

中图分类号：

学科分类号：

摘要：

The influence of Zn ions implanted in a sapphire single crystal on the kinetics of attainment of the equilibrium state of the surface potential and current characteristics is considered. To consider the influence of the surface state on the dielectric charging process, one of the samples is annealed in an oxygen atmosphere to form ZnO on the surface. The obtained results show a significant increase in the rate of attainment of the equilibrium surface potential after ion implantation. To understand the obtained results, the dependence of the concentration of the doping impurity as a function of the crystal depth is measured. The possible mechanisms affecting a change in achievement of the potential are discussed. © A.A. Tatarintsev, V.V. Privezentsev, E.I. Rau, A.V. Goryachev, 2018.

引用

页码：213 / 216

页数：3

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