Physical and molecular basis of ion channel gating: Can electrostatic interactions close the ion channel?

We analyzed voltage-dependent ion channel structure and conformational changes corresponding to channel gating. During the gating, S4 segments, as well as other parts of the channel, undergo a set of conformational modifications. These changes are accompanied by complicated movements of positive charges that are mostly located in the S4 segments. These charges electrostatically interact with the ions passing through the channel. The interaction energy depends on the conformational state of the channel, i.e., on the mutual positions of the permeant ions and these charges. Analyzing and making energetical estimations, we propose a hypothesis: the closed state of the ion channel corresponds to the S4 position when electrostatic interaction between positively charged groups of the S4 segments and permeant ions is strong enough to close the pathway for these ions.