The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide

被引：0
|
作者：
S. A. Nomoev
I. S. Vasil’evskii
A. N. Vinichenko
K. I. Kozlovskii
A. A. Chistyakov
E. D. Mishina
D. I. Khusyainov
A. M. Buryakov
机构：
[1] National Research Nuclear University Moscow Engineering Physics Institute,
[2] Moscow Technological University Moscow Institute of Radio Electronics and Automation,undefined
来源：
Technical Physics Letters | 2018年 / 44卷
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摘要：
Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.
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页码：44 / 46
页数：2
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