Growth and Electrical Properties of Pb1 – xMnxTe Crystals

被引：0
|
作者：
Z. F. Agaev
E. M. Allakhverdiev
G. M. Murtuzov
D. Sh. Abdinov
机构：
[1] Institute of Photoelectronics,Academy of Sciences of Azerbaijan
来源：
Inorganic Materials | 2003年 / 39卷
关键词：
Electrical Conductivity; Inorganic Chemistry; Electrical Property; Valence Band; Transport Property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Pb1 – xMnxTe single crystals were grown, and their electrical conductivity, thermoelectric power, and Hall coefficient were measured from 80 to 300 K. The results indicate that the transport properties of the crystals are determined by lattice defects, the structure of the valence band, and Mn content.
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页码：449 / 451
页数：2
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