Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

被引:0
|
作者
A. A. Ivanov
V. V. Chaldyshev
E. E. Zavarin
A. V. Sakharov
W. V. Lundin
A. F. Tsatsulnikov
机构
[1] Ioffe Institute,
[2] Peter the Great Saint Petersburg Polytechnic University,undefined
[3] Submicron Heterostructures for Microelectronics,undefined
[4] Research and Engineering Center,undefined
[5] Russian Academy of Sciences,undefined
来源
Semiconductors | 2021年 / 55卷
关键词
resonance Bragg structure; quantum wells; excitons; exciton resonance; Bragg resonance; gallium nitride;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:S49 / S53
相关论文
共 50 条
  • [1] Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
    Ivanov, A. A.
    Chaldyshev, V. V.
    Zavarin, E. E.
    Sakharov, A., V
    Lundin, W., V
    Tsatsulnikov, A. F.
    SEMICONDUCTORS, 2021, 55 (SUPPL 1) : S49 - S53
  • [2] Excitonic optical absorption in wurtzite InGaN/GaN quantum wells
    Wei, Shuyi
    Jia, Yalei
    Xia, Congxin
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (01) : 9 - 15
  • [3] Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    A. S. Bolshakov
    V. V. Chaldyshev
    E. E. Zavarin
    A. V. Sakharov
    V. V. Lundin
    A. F. Tsatsulnikov
    Semiconductors, 2016, 50 : 1431 - 1434
  • [4] Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    Bolshakov, A. S.
    Chaldyshev, V. V.
    Zavarin, E. E.
    Sakharov, A. V.
    Lundin, V. V.
    Tsatsulnikov, A. F.
    SEMICONDUCTORS, 2016, 50 (11) : 1431 - 1434
  • [5] Excitonic spin lifetimes in InGaN quantum wells and epilayers
    Brown, J.
    Wells, J. -P. R.
    Kundys, D. O.
    Fox, A. M.
    Wang, T.
    Parbrook, P. J.
    Mowbray, D. J.
    Skolnick, M. S.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)
  • [6] Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications
    Xia, Congxin
    Zhang, Heng
    Jia, Yalei
    Wei, Shuyi
    Jia, Yu
    SCRIPTA MATERIALIA, 2013, 68 (3-4) : 203 - 206
  • [7] Optical gain dynamics in InGaN/InGaN quantum wells
    Karaliunas, Mindaugas
    Kuokstis, Edmundas
    Kazlauskas, Karolis
    Jursenas, Saulius
    Hoffmann, Veit
    Knauer, Arne
    SIXTH INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MATERIALS AND DEVICES (AOMD-6), 2008, 7142
  • [8] Optical properties of InGaN quantum wells
    Depts. Mat. and Elec. and Comp. Eng., University of California, Santa Barbara, CA 93106, United States
    不详
    不详
    不详
    Mater Sci Eng B Solid State Adv Technol, 1-3 (298-306):
  • [9] Optical properties of InGaN quantum wells
    Chichibu, SF
    Abare, AC
    Mack, MP
    Minsky, MS
    Deguchi, T
    Cohen, D
    Kozodoy, P
    Fleischer, SB
    Keller, S
    Speck, JS
    Bowers, JE
    Hu, E
    Mishra, UK
    Coldren, LA
    DenBaars, SP
    Wada, K
    Sota, T
    Nakamura, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 298 - 306
  • [10] Research of resonant light reflection by a periodic system of GaAs/AlGaAs quantum wells
    Tonkaev, P. A.
    Kondikov, A. A.
    Chaldyshev, V. V.
    5TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING IN PHYSICAL SCIENCES (IC-MSQUARE 2016), 2016, 738