Comparative analysis of wideband CMOS low-noise amplifiers for the RF range

被引：0
|
作者：
Balashov E.V. [1 ]
Korotkov A.S. [1 ]
机构：
[1] St. Petersburg State Technical University, St. Petersburg
来源：
Russian Microelectronics | 2008年 / 37卷 / 04期
关键词：
CMOS integrated circuits - Frequency domain analysis - Broadband amplifiers;
D O I：
10.1134/S1063739708040070
中图分类号：
学科分类号：
摘要：
A formalized method is presented for the circuit design of wideband low-noise amplifiers (LNAs) for RF applications. For a variety of LNAs thus obtained, a comparative performance analysis is performed by computer simulation in the frequency domain, involving optimization of small-signal LNA models. Optimal designs are thus identified showing a low reflection coefficient and a high gain over a wide frequency range extending to several gigahertz. Account is taken of limitations imposed by existing manufacturing technologies. For the sake of simplicity, the LNA configurations considered do not include frequency-selective networks. © 2008 MAIK Nauka.
引用
收藏
页码：264 / 276
页数：12
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