Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures

被引：0
|
作者：
S. S. Murzin
S. I. Dorozhkin
G. Landwehr
A. C. Gossard
机构：
[1] Institute of Solid State Physics,
[2] Physikalisches Institut der Universität Würzburg,undefined
[3] University of California,undefined
来源：
Journal of Experimental and Theoretical Physics Letters | 1998年 / 67卷
关键词：
73.40.Kp; 73.50.Jt;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resistivity ρ grows with a decreasing derivative dρ/dT, and (ii) the positive magnetoresistance diminishes from about 40% at T=0.4 K to about 1% at T=4.2 K. The results are explained in terms of a temperature-dependent mutual scattering of the holes, accompanied by momentum transfer between two different spin-split subbands.
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页码：113 / 119
页数：6
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