The effect of irradiation with high-energy protons on 4H-SiC detectors

The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 1016 cm−2) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 × 1011 to 5.9 × 1013 cm−2. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7–0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.