Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures

被引：0
|
作者：
I. A. Kurova
N. N. Ormont
O. A. Golikova
M. M. Kazanin
机构：
[1] M.V. Lomonosov Moscow State University,A. F. Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 1998年 / 32卷
关键词：
Experimental Study; Magnetic Material; Electromagnetism; Metastable State; Photoinduced Metastable State;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of an experimental study of dark-conductivity kinetics in a-Si:H after short-term and long-term illumination, are presented. The films were deposited at temperatures in the range Ts=300–390 °C. Data on relaxation of the photoinduced metastable states were found to correlate with the Fermi-level position.
引用
收藏
页码：1134 / 1136
页数：2
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