Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures

被引：0

作者：

I. A. Kurova

N. N. Ormont

O. A. Golikova

M. M. Kazanin

机构：

[1] M.V. Lomonosov Moscow State University,A. F. Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Semiconductors | 1998年 / 32卷

关键词：

Experimental Study; Magnetic Material; Electromagnetism; Metastable State; Photoinduced Metastable State;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The results of an experimental study of dark-conductivity kinetics in a-Si:H after short-term and long-term illumination, are presented. The films were deposited at temperatures in the range Ts=300–390 °C. Data on relaxation of the photoinduced metastable states were found to correlate with the Fermi-level position.

引用

页码：1134 / 1136

页数：2

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