Current Transport and Dielectric Analysis of Ni/SiO2/P-Si Diode Prepared by Liquid Phase Epitaxy

Herein, the Ni/SiO2/p-Si MIS diode was developed via the liquid phase epitaxy (LPE) process. The structural and surface morphology were investigated by XRD and SEM techniques. The electrical study of the device, Ni/SiO2/n-Si, demonstrates a worthy rectification and the electrical parameters of the Schottky diode have computed using the I-V characterization. Different dielectric parameters as capacitance (C), permittivity (ε’), dielectric loss (ε”), conductance and ac conductivity (σac) were evaluated. Moreover, their relation to bias dc voltage has been examined in the frequency range 10 Hz–20 MHz, temperature 303 K to 363 K and DC bias voltage from -2 V to 2 V. Also, the variable investigated parameters were found to be dependent upon temperature, frequency and bias voltage.