Impact of nucleation of carbonaceous clusters on structural, electrical and optical properties of Cr+-implanted PMMA

被引:0
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作者
Shafaq Arif
M. Shahid Rafique
Farhat Saleemi
Fabian Naab
Ovidiu Toader
Arshad Mahmood
Uzma Aziz
机构
[1] Lahore College for Women University,Department of Physics
[2] University of Engineering and Technology,Department of Physics
[3] University of Michigan,Michigan Ion Beam Laboratory, Department of Nuclear Engineering and Radiological Sciences
[4] National Institute of Lasers and Optronics (NILOP),undefined
来源
Applied Physics A | 2016年 / 122卷
关键词
PMMA; Free Charge Carrier; Urbach Energy; Disorder Content; Average Penetration Depth;
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摘要
Specimens of polymethylmethacrylate (PMMA) have been implanted with 400 keV Cr+ ions at different ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The possible chemical reactions involved in the nucleation of conjugated carbonaceous clusters in implanted PMMA are discussed. Furthermore, impact of formation of carbonaceous clusters on structural, optical, electrical and morphological properties of implanted PMMA has been examined. The structural modifications in implanted PMMA are observed by Raman spectroscopy. The variation in optical band gap and Urbach energy is measured using UV–visible spectroscopic analysis. The effects of Cr+ ion implantation on electrical and morphological properties are investigated by four-probe apparatus and atomic force microscopy, respectively. The Raman spectroscopic analysis confirmed the formation of carbonaceous clusters with the transformation of implanted layer of PMMA into amorphous carbon. Simultaneously, the optical band gap of implanted PMMA has reduced from 3.13 to 0.85 eV. The increase in Urbach energy favors the decline in band gap together with the structural modification in implanted PMMA. As a result of Cr+ ion implantation, the electrical conductivity of PMMA has improved from 2.14 ± 0.06 × 10−10 S/cm (pristine) to 7.20 ± 0.36 × 10−6 S/cm. The AFM images revealed a decrease in surface roughness with an increment in ion fluence up to 5 × 1014 ions/cm2. The modification in the electrical, optical and structural properties makes the PMMA a promising candidate for its future utilization, as a semiconducting and optically active material, in various fields like plastic electronics and optoelectronic devices.
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