Simulation of fractal cluster growth on a substrate under ion bombardment

被引：0
|
作者：
Kh. B. Ashurov
S. E. Maksimov
B. L. Oksengendler
O. E. Sidorenko
M. B. Guseva
机构：
[1] Uzbek Academy of Sciences,Arifov Institute of Electronics
[2] Voronezh State University,undefined
[3] Moscow State University,undefined
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2011年 / 5卷
关键词：
Fractal Dimension; Surface Investigation; Neutron Technique; Gyration Radius; Fractal Cluster;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ion-stimulated growth of a fractal cluster on the substrate is simulated in regimes that are intermediate between diffusion- and reaction-limited aggregations. It is shown that the fractal dimension of a growing cluster and the type of formed epitaxial structure are due to the sequence of ion-stimulated processes with different fractal dimensions. The algorithm for revealing the ion stimulation mechanism of processes based on fractal laws is proposed.
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页码：587 / 590
页数：3
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