Ultrasensitive strain gauge with tunable temperature coefficient of resistivity

被引:0
|
作者
Lizhi Yi
Weihong Jiao
Changming Zhu
Ke Wu
Chao Zhang
Lihua Qian
Shuai Wang
Yingtao Jiang
Songliu Yuan
机构
[1] Huazhong University of Science and Technology,School of Physics
[2] Huazhong University of Science and Technology,Flexible Electronics Research Center
[3] Huazhong University of Science and Technology,School of Chemistry and Chemical Engineering
[4] University of Nevada,Nevada Nanotechnology Center & Department of Electrical and Computer Engineering
来源
Nano Research | 2016年 / 9卷
关键词
strain gauge; flexible gauge; Au nanoparticle; sound-wave detection; radial-artery detection; electron tunneling;
D O I
暂无
中图分类号
学科分类号
摘要
We demonstrate an ultrasensitive strain gauge based on a discontinuous metal film with a record detection limit as low as 8.3 × 10–6. Constructed by well-tunable crevices on the nanometer scale within the film, this gauge exhibits an ultrafast dynamic response to vibrations with a frequency range of 1 Hz to 10 kHz. More importantly, the temperature coefficient of resistivity (TCR) of the metal film is tunable owing to the cancellation effect caused by the possibility of tunneling across the nanoscale crevices (showing a negative temperature dependence) and the electron conduction within the metal islands (showing a positive temperature dependence). Consequently, a nullified TCR is achievable when the crevice size can be precisely controlled. Thus, a fabrication strategy to precisely control the nanoscale crevices was developed in this study through the real-time tracking of the electrical conductivity during thermal evaporation. The ultrasensitive strain gauge with a tunable thermal drift introduces numerous opportunities for precision devices and wearable electronics with superior reliability.
引用
收藏
页码:1346 / 1357
页数:11
相关论文
共 50 条
  • [21] Physical model for the resistivity and temperature coefficient of resistivity in heavily doped polysilicon
    Raman, Manjula S.
    Kifle, Teweldebhran
    Bhattacharya, Enakshi
    Bhat, K. N.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (08) : 1885 - 1892
  • [22] TUNABLE DUAL MODE CARBON NANOTUBE STRAIN GAUGE
    Vollmann, Morten
    Roman, Cosmin
    Hierold, Christofer
    2024 IEEE 37TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, MEMS, 2024, : 931 - 934
  • [23] Continuously tunable temperature coefficient of resistivity in antiperovskite AgN1-xCxMn3 (0 ≤ x ≤ 0.15)
    Lin, J. C.
    Tong, P.
    Lin, S.
    Wang, B. S.
    Song, W. H.
    Sun, Y. R.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (21)
  • [24] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE
    BULLIS, WM
    BREWER, FH
    KOLSTAD, CD
    SWARTZEN.LJ
    SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &
  • [25] ULTRASENSITIVE, WIDE FREQUENCY-RANGE MAGNETOELASTIC STRAIN-GAUGE
    WUNFOGLE, M
    SAVAGE, HT
    CLARK, AE
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 3803 - 3803
  • [26] LONGITUDINAL-STRAIN COEFFICIENT OF RESISTIVITY OF THIN SILVER FILM
    SINGH, A
    PROCEEDINGS OF THE IEEE, 1974, 62 (04) : 524 - 526
  • [27] COMPUTATION OF THE STRAIN COEFFICIENT OF RESISTIVITY IN THIN METALLIC-FILMS
    GHODGAONKAR, AM
    RAMANI, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (01): : K99 - K103
  • [28] MODEL FOR SIZE EFFECT IN STRAIN COEFFICIENT OF RESISTIVITY IN METALLIC FILMS
    VERMA, BS
    JAIN, GC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01): : 171 - 175
  • [30] RESISTIVITY AND TEMPERATURE-COEFFICIENT OF RESISTIVITY OF RUTHENIUM OXIDE LAYERS INFLUENCE OF MORPHOLOGY
    LODI, G
    DEASMUNDIS, C
    ARDIZZONE, S
    SIVIERI, E
    TRASATTI, S
    SURFACE TECHNOLOGY, 1981, 14 (04): : 335 - 343