Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering

被引：0
|
作者：
A. M. Danishevskii
A. S. Tregubova
A. A. Lebedev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Insititute
来源：
Semiconductors | 1997年 / 31卷
关键词：
Silicon; Carbide; Raman Spectrum; Magnetic Material; Silicon Carbide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Raman and X-ray topographic measurements were carried out on epitaxial films of silicon carbide grown at Cree Research Inc. by vapor-phase epitaxy on bulk 6H-SiC substrates. The objective was to identify ranges of the Raman spectrum of 6H-SiC that were particularly sensitive to macrostructural defects (dislocations, inclusions, etc.) in these films, and to determine what conclusions could be drawn about the properties of the corresponding portions of the films.
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页码：1025 / 1029
页数：4
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