Effects of Li/M (M = Al, Ga, In, and Er) co-doping on the electrical properties of BiFeO3–BaTiO3 ceramics

被引:0
|
作者
Dan Xu
Hong Zhao
Taolin Yu
Xiaoyang Duan
Wenjie Zhao
机构
[1] Harbin University of Science and Technology,School of Science
[2] Harbin University of Science and Technology,Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The defect structures and electrical properties of 0.75BiFeO3–0.25BaTiO3 ceramics have been modified using Li/M dopants (M = Al, Ga, In, and Er). The effects of Li/M dopants with various ionic radii and electronegativities on the crystal structure, dielectric properties, ferroelectricity, leakage, and insulation behaviors of the ceramics have been investigated. The doped ceramics displayed a typical perovskite structure with a dominant rhombohedral phase, but the impurities BaFe0.24Fe0.76O2.88 emerged and increased in concentration as doping content x increased. As x increased, the dielectric loss reduced and the ferroelectricity improved noticeably. At x = 6 mol%, leakage current and resistivity studies indicated that the ceramics showed enhanced insulating qualities, particularly high resistivity of ~ 1011 Ω cm was recorded in Li/Er-doped samples. The reduced oxygen vacancies are responsible for these results, which were evaluated by defect chemistry and validated by XPS analysis.
引用
收藏
页码:22736 / 22750
页数:14
相关论文
共 50 条
  • [41] Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films
    J. W. Kim
    C. M. Raghavan
    J. Y. Choi
    S. S. Kim
    Journal of the Korean Physical Society, 2015, 66 : 1051 - 1056
  • [42] Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films
    Kim, J. W.
    Raghavan, C. M.
    Choi, J. Y.
    Kim, S. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (07) : 1051 - 1056
  • [43] Fabrication and Ferroelectric Properties of BiFeO3/BaTiO3 Heterostructures
    Aleszkiewicz, M.
    Dybko, K.
    Dynowska, E.
    Dluzewski, P.
    Przyslupski, P.
    ACTA PHYSICA POLONICA A, 2016, 130 (02) : 511 - 515
  • [44] Enhanced dielectric properties of BaTiO3 ceramics with cerium doping, manganese doping and Ce-Mn co-doping
    Mostafa, Myeesha
    Rahman, Mohammad Jellur
    Choudhury, Shamima
    SCIENCE AND ENGINEERING OF COMPOSITE MATERIALS, 2019, 26 (01) : 62 - 69
  • [45] Enhanced multiferroic properties of BiFeO3 ceramics by Ba and high-valence Nb co-doping
    Wu, M. S.
    Huang, Z. B.
    Han, C. X.
    Yuan, S. L.
    Lu, C. L.
    Xia, S. C.
    SOLID STATE COMMUNICATIONS, 2012, 152 (24) : 2142 - 2146
  • [46] Enhanced ferroelectric and ferromagnetic properties of Er-modified BiFeO3–BaTiO3 lead-free multiferroic ceramics
    Yongquan Guo
    Tao Wang
    Lihua He
    Qiaoji Zheng
    Jie Liao
    Chenggang Xu
    Dunmin Lin
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 5741 - 5747
  • [47] Piezoelectric and ferroelectric properties of Ga modified BiFeO3–BaTiO3 lead-free ceramics with high Curie temperature
    Qin Zhou
    Changrong Zhou
    Huabin Yang
    Changlai Yuan
    Guohua Chen
    Lei Cao
    Qiaolan Fan
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 196 - 201
  • [48] Effect of BiMO3 (M=Al, In, Y, Sm, Nd, and La) doping on the dielectric properties of BaTiO3 ceramics
    Wei, Meng
    Zhang, Jihua
    Wu, Kaituo
    Chen, Hongwei
    Yang, Chuanren
    CERAMICS INTERNATIONAL, 2017, 43 (13) : 9593 - 9599
  • [49] Effects of Ba and Ti co-doping on BiFeO3 multiferroic ceramics optimized through two-step doping
    Zhu, Sheng
    Gu, Yanhong
    Xiong, Yao
    Zhou, Xi
    Liu, Yong
    Wang, Yu
    Chen, Wanping
    JOURNAL OF ADVANCED CERAMICS, 2016, 5 (03) : 204 - 209
  • [50] Effects of Mn and Cu Doping on Electrical Properties of 0.75BiFeO3-0.25BaTiO3 Ceramics
    Chandarak, S.
    Ngamjarurojana, A.
    Pojprapai, S.
    Srilomsak, S.
    Rujirawat, S.
    Yimnirun, R.
    INTEGRATED FERROELECTRICS, 2010, 114 : 100 - 107