Influence of AST additives on the stability of PTCR characteristics and microstructure in ferroelectric ceramics

被引:0
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作者
Zhi Cheng Li
Lena Smuk
Bill Bergman
机构
[1] Royal Institute of Technology (KTH),Department of Materials Science and Engineering
关键词
Microstructure; TiO2; SiO2; Al2O3; Atomic Force Microscopy;
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摘要
(Ba0.69Pb0.31)TiO3 ceramics were prepared using Al2O3, SiO2, additives and excess of TiO2 (AST). The characteristics of positive temperature coefficient of resistivity (PTCR) was studied and the corresponding microstructures were investigated using atomic force microscopy and scanning electron microscopy. The results showed that the PTCR effect was related to the AST additives. The maximum value of resistivity in the ceramics with lower content of or without Al2O3 and SiO2 additives was much lower than in those with AST additives. Ceramics with low AST content, which were heated by electric field to a temperature much higher than their Curie temperature, lost the PTCR effect after the electric field stimulation. The microstructure observations revealed that re-crystallization took place in the ceramics with lower content of or without AST additives resulting in the loss of the PTCR effect.
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页码:561 / 567
页数:6
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