Marangoni flow of molten silicon: The effects of oxygen partial pressure

被引：0
|
作者：
T. Hibiya
机构：
[1] Tokyo Metropolitan Institute of Technology,Department of Aerospace Engineering
来源：
Journal of Materials Science | 2005年 / 40卷
关键词：
Oxygen Partial Pressure; Liquid Bridge; Temperature Oscillation; Marangoni Number; Molten Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Instability of the Marangoni flow of molten silicon is discussed. Time-dependent behavior of azimuthal wave numbers (m) for flow instability was investigated based on temperature oscillation measurements using a θ-t analysis, and appearance ratio of each azimuthal wave number is analyzed. The relationship between frequency and azimuthal wave numbers is deduced from an analysis of appearance ratios at a decomposed frequency band using a wavelet analysis. Oxygen partial pressure at the melt surface can be predicted using the Ratto-Ricci-Arato model. Anomalous recalescence behavior and surface oxidation of levitated molten silicon are shown. Growth striation is induced in silicon crystals grown even under high oxygen-partial pressure.
引用
收藏
页码：2417 / 2423
页数：6
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