共 50 条
- [43] Emerging topological insulating phase in Ge-Sb-Te compounds [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (10): : 1874 - 1879
- [44] Atomistic Modeling of Charge-Trapping Defects in Amorphous Ge-Sb-Te Phase-Change Memory Materials [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (08):
- [45] Crystallization behavior of oxygen-doped Ge-Sb-Te phase-change films [J]. ADVANCED OPTICAL STORAGE TECHNOLOGY, 2002, 4930 : 367 - 371
- [46] Potential of Ge-Sb-Te phase change optical disks with high speed overwrite ability [J]. ODS - 1997 OPTICAL DATA STORAGE TOPICAL MEETING, CONFERENCE DIGEST, 1997, : 98 - 99
- [47] In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys [J]. FUNDAMENTAL RESEARCH, 2024, 4 (05): : 1235 - 1242
- [48] Long-range crystal-lattice distortion fields of epitaxial Ge-Sb-Te phase-change materials [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (04): : 769 - 773
- [49] Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations [J]. MRS Advances, 2016, 1 (39) : 2701 - 2709
- [50] Optical properties of Ge-Sb-Te chalcogenides [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2662 - 2664