Low resistivity molybdenum thin film towards the back contact of dye-sensitized solar cell

被引：0

作者：

VUONG SON

TRAN THI HA

LUONG T THU THUY

NGUYEN NGOC HA

NGUYEN DUC CHIEN

MAI ANH TUAN

机构：

[1] Hanoi University of Science and Technology,International Training Institute for Materials Science (ITIMS)

[2] Hanoi National University of Education,Department of Chemistry

来源：

Bulletin of Materials Science | 2015年 / 38卷

关键词：

Back contact; molybdenum; DC sputtering; dye-sensitized solar cell.;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150 W at 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E −6 Ω cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.

引用

页码：1891 / 1897

页数：6

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