On the effect of electron-phonon interaction on the temperature dependences of magnetotransport in quantum hall systems

被引:0
|
作者
A. A. Greshnov
Y. M. Beltukov
机构
[1] Russian Academy of Sciences,Ioffe Physical
来源
Semiconductors | 2014年 / 48卷
关键词
Strong Magnetic Field; Landau Level; Localization Length; Quantum Hall Effect; Random Potential;
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摘要
The effect of electron-phonon interaction on the temperature dependences of conductivity is studied in the mode of the integer quantum Hall effect. It is shown that electron-phonon interaction leads to the possibility of transport in the region of localized states, thus forming the shape of magnetotransport curves at a given temperature. The relation between scaling indices in the power laws describing the dependences of the widths of transition regions between successive plateaus of the quantum Hall effect on the temperature and localization length is determined within an analytical model as a function of the energy measured from a certain Landau-level center. Direct numerical calculations of the magnetotransport curves are performed at various temperatures. The results are in good agreement with theory and experimental data on the integer quantum Hall effect.
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页码:228 / 234
页数:6
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