Model of nonequilibrium crystallization for the numerical solution to the problem of semiconductor crystal growth from melts

被引：0
|
作者：
V. A. Goncharov
I. V. Azanova
B. V. Vasekin
机构：
[1] Moscow Institute of Electronic Technology (Technical University),
来源：
Semiconductors | 2011年 / 45卷
关键词：
Crystal Growth; Stefan Problem; Impurity Distribution; Crystallization Front; Constitutional Supercooling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model combining both non-stationary Stefan problem solution and classical ideas of constitutional supercooling is proposed in this paper. Together with Navier-Stokes equations in melt and heat equation in crystal this model is used for numerical solution of semiconductor crystal growth problem. Simulation of formation of fundamental and technological striations is performed. Numerical simulation results are compared with experimental data.
引用
收藏
页码：1632 / 1637
页数：5
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